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Proceedings Paper

An InGaSb TFET with high ION/IOFF ratio and low circuit leakage power
Author(s): Bhargav K. Mamilla; Sooraj Nair; Bahniman Ghosh
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Paper Abstract

This paper investigates suitable materials for tunnel FETs (TFETs). TFETs where entire body is made of group III-V and IV elements are simulated. In1-xGaxSb TFET with a mole fraction of x=0.75 shows a high ION/IOFF ratio and steeper sub threshold swing. Finally, inverter, buffer, nand and nor gates are simulated using In0.25Ga0.75Sb TFET models and are compared with Silicon (Si) MOSFET gates in terms of delay, dynamic and leakage powers. InGaSb TFET gates have less leakage power compared to Si MOSFET gates.

Paper Details

Date Published: 15 October 2012
PDF: 4 pages
Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85492C (15 October 2012); doi: 10.1117/12.927414
Show Author Affiliations
Bhargav K. Mamilla, Indian Institute of Technology Kanpur (India)
Sooraj Nair, Indian Institute of Technology Kanpur (India)
Bahniman Ghosh, Indian Institute of Technology Kanpur (India)


Published in SPIE Proceedings Vol. 8549:
16th International Workshop on Physics of Semiconductor Devices
Monica Katiyar; B. Mazhari; Y N Mohapatra, Editor(s)

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