Share Email Print

Proceedings Paper

Tuning the photoluminescence of ZnO thin films by indium doping
Author(s): Saraswathi Chirakkara; S .B. Krupanidhi
Format Member Price Non-Member Price
PDF $17.00 $21.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Zinc Oxide (ZnO) and indium doped ZnO (IZO) thin films with different indium compositions were grown on p-type boron doped Si substrates by pulsed laser deposition (PLD). The effect of indium concentration on the structural, optical and electrical properties of the film was studied. XRD, XPS and Raman studies confirm the single phase formation and successful doping of In in to ZnO. We observed various photoluminescence emissions, ranging from UV to visible, with the incorporation of In into ZnO. Room temperature Current-Voltage (I-V) characteristics showed good p-n junction properties for n-type-undoped and In doped ZnO with p-type substrates. The turn on voltage was observed to be decreasing with increase in In composition.

Paper Details

Date Published: 15 October 2012
PDF: 4 pages
Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85492U (15 October 2012); doi: 10.1117/12.927412
Show Author Affiliations
Saraswathi Chirakkara, Indian Institute of Science (India)
S .B. Krupanidhi, Indian Institute of Science (India)

Published in SPIE Proceedings Vol. 8549:
16th International Workshop on Physics of Semiconductor Devices
Monica Katiyar; B. Mazhari; Y N Mohapatra, Editor(s)

© SPIE. Terms of Use
Back to Top