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Proceedings Paper

The impact of a high-κ gate dielectric on a p-channel tunnel field- effect transistor
Author(s): Avik Chattopadhyay; Abhijit Mallik
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Paper Abstract

In this paper, the impact of varying the dielectric constant of the gate dielectric on the device performance of a double gate p-channel tunnel field-effect transistor (p-TFET) is reported for the first time. It is observed that fringing field arising out of a high−κ gate dielectric degrades the device performance of a p-TFET, which is in contrast with its nchannel counterpart, where the same been reported to yield better performance. Also, the impact of fringing field is found to be larger for a p-TFET with higher source doping.

Paper Details

Date Published: 15 October 2012
PDF: 5 pages
Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85492B (15 October 2012); doi: 10.1117/12.927411
Show Author Affiliations
Avik Chattopadhyay, Univ. of Calcutta (India)
Abhijit Mallik, Univ. of Calcutta (India)


Published in SPIE Proceedings Vol. 8549:
16th International Workshop on Physics of Semiconductor Devices
Monica Katiyar; B. Mazhari; Y N Mohapatra, Editor(s)

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