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Characterization of dislocation-based nanotransistors
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Paper Abstract

Dislocations are native nanowires. The realization of well-defined dislocation networks allows the electrical characterization of only a small number of dislocations. Different types of dislocations were analyzed by integration into the channel of MOSFETs. A substantial increase of the drain current was proved if only a few dislocations are present in the channel of nMOSFETs. Low-temperature measurements indicate single-electron tunneling on dislocation core defects.

Paper Details

Date Published: 15 October 2012
PDF: 7 pages
Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 854929 (15 October 2012); doi: 10.1117/12.927401
Show Author Affiliations
Manfred Reiche, Max Planck Institute of Microstructure Physics (Germany)
Martin Kittler, IHP microelectronics (Germany)

Published in SPIE Proceedings Vol. 8549:
16th International Workshop on Physics of Semiconductor Devices
Monica Katiyar; B. Mazhari; Y N Mohapatra, Editor(s)

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