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Proceedings Paper

Measurement and Analysis of Source/Drain Contact Resistance in FinFETs
Author(s): Abhisek Dixit; Nadine Collaert; Malgorzata Jurczak
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Paper Abstract

FinFET is a key device architecture for the 22-nm CMOS and beyond technology nodes. If special care is not taken, these devices could suffer from high series resistance due to the narrow width of their source/drain regions. Using the electrical characterization of fabricated devices, we extract and analyze the dominant component of this series resistance, namely the source/drain contact resistance.

Paper Details

Date Published: 15 October 2012
PDF: 5 pages
Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85493L (15 October 2012); doi: 10.1117/12.927370
Show Author Affiliations
Abhisek Dixit, IBM Semiconductor Research and Development Ctr. (India)
Nadine Collaert, IMEC Leuven (Belgium)
Malgorzata Jurczak, IMEC Leuven (Belgium)

Published in SPIE Proceedings Vol. 8549:
16th International Workshop on Physics of Semiconductor Devices
Monica Katiyar; B. Mazhari; Y N Mohapatra, Editor(s)

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