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Proceedings Paper

Enhanced optical absorption in silicon nanowire
Author(s): Mehedhi Hasan; Md. Fazlul Huq; Zahid Hasan Mahmood; Sabina Hussain
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Paper Abstract

Silicon nanowires were synthesized on silicon substrate by depositing Ag and Cu particles using electroless metal deposition (EMD) technique followed by HF/Fe(NO3)3 solution based etching at room temperature. Structural and optical characterizations were done on synthesized nanowires. Nanowires of diameter 45 nm to 200 nm having length 2 μm to 4 μm were evident from the scanning electron microscope (SEM) images with maximum aspect ratio 100. Optical absorption study using 400 nm to 1100 nm wavelength by UV/VIS spectrophotometer revealed that synthesized structures absorbed up to 78% of incident radiation in the wavelength range 400 nm to 820 nm, which is much better than that of bulk silicon as they absorbed maximum 67% of the radiation. This observation supports that the material synthesized could be a potential candidate for efficient photovoltaic solar cell and other optoelectronic devices.

Paper Details

Date Published: 15 October 2012
PDF: 6 pages
Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 854928 (15 October 2012); doi: 10.1117/12.927305
Show Author Affiliations
Mehedhi Hasan, Univ, of Dhaka (Bangladesh)
Md. Fazlul Huq, Univ, of Dhaka (Bangladesh)
Zahid Hasan Mahmood, Univ, of Dhaka (Bangladesh)
Sabina Hussain, Univ, of Dhaka (Bangladesh)

Published in SPIE Proceedings Vol. 8549:
16th International Workshop on Physics of Semiconductor Devices
Monica Katiyar; B. Mazhari; Y N Mohapatra, Editor(s)

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