Share Email Print
cover

Proceedings Paper

Nanocrystalline cubic Silicon Carbide thin films for the window layer of solar cells deposited by Hot Wire CVD
Author(s): Himanshu S. Jha; M. Singh; Asha Yadav; . Lalhriatzuala; Dinesh Deva; Pratima Agarwal
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Nanocrystalline cubic silicon carbide (nc-3C-SiC) films are deposited using hot wire chemical vapour deposition technique at ~350 °C on glass substrates using SiH4 /CH4/H2 as precursor gases. We investigated the influence of total gas pressure on the structural, optical and transport properties of nc-3C-SiC films. Raman scattering spectra and X-ray diffraction patterns revealed that the film prepared below 2 mbar is nanocrustalline silicon (nc-Si), while at ≥ 2 mbar films are nc-3C-SiC. We achieved high deposition rate (≥ 14-20 nm/min), high optical band gap (3.2-3.4 eV) and high conductivity (~ 10-4 -10-2 Ω-1cm-1) suitable for window layer for Solar cells.

Paper Details

Date Published: 15 October 2012
PDF: 6 pages
Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85493D (15 October 2012); doi: 10.1117/12.927239
Show Author Affiliations
Himanshu S. Jha, Indian Institute of Technology Guwahati (India)
M. Singh, Indian Institute of Technology Guwahati (India)
Asha Yadav, Indian Institute of Technology Guwahati (India)
. Lalhriatzuala, Indian Institute of Technology Guwahati (India)
Dinesh Deva, Indian Institute of Technology Kanpur (India)
Pratima Agarwal, Indian Institute of Technology Guwahati (India)


Published in SPIE Proceedings Vol. 8549:
16th International Workshop on Physics of Semiconductor Devices
Monica Katiyar; B. Mazhari; Y N Mohapatra, Editor(s)

© SPIE. Terms of Use
Back to Top