Share Email Print
cover

Proceedings Paper

Influence of small variation in impact ionization rate data on simulation of 4H-SiC IMPATT
Author(s): S. R. Pattanaik; J. Pradhan; S. K. Swain; P. Panda; G. N. Dash
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Material parameters like ionization rate coefficients for electrons and holes play important role in determining the performance of IMPATT device. Accuracy of these material data is significant for the quality of simulation results. In this paper, the influence of small variation in the ionization rate data on the performance of 4H-SiC IMPATT diode has been presented using our computer simulation program.

Paper Details

Date Published: 15 October 2012
PDF: 6 pages
Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85490B (15 October 2012); doi: 10.1117/12.926991
Show Author Affiliations
S. R. Pattanaik, Apex Institute of Technology and Management (India)
J. Pradhan, Sambalpur Univ. (India)
S. K. Swain, Sambalpur Univ. (India)
P. Panda, Sambalpur Univ. (India)
G. N. Dash, Sambalpur Univ. (India)


Published in SPIE Proceedings Vol. 8549:
16th International Workshop on Physics of Semiconductor Devices
Monica Katiyar; B. Mazhari; Y N Mohapatra, Editor(s)

© SPIE. Terms of Use
Back to Top