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Proceedings Paper

Noise characterization of ALD HfO2 MOS capacitors with different metal (Au, Pd and Pt) gates
Author(s): S. Mallik; C. Mukherjee; C. Mahata; G. K. Dalapati; D. Z. Chi; C. K. Maiti
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Paper Abstract

Ultra-thin HfO2 high-k gate dielectric has been deposited directly on strained Si0.81Ge0.19 by atomic layer deposition (ALD). The effects of metal gate electrodes (Au, Pd and Pt) on dielectric properties and charge trapping behavior of metal-insulator-semiconductor (MIS) capacitors are investigated. Grazing incidence X-ray diffraction (GIXRD) analysis shows that the conversion from amorphous to crystalline phase start to appear in the HfO2 films when annealed between 400-500°C. The measured ΔVfband hysteresis in high frequency C-V characteristics are used to study the pre-existing traps in the dielectric. Low-frequency noise characteristics have been measured using MIS capacitors with contact area ~ 2×10-3 cm2. The power spectral densities (PSD) of the MIS capacitors with metal gate electrodes are compared and their bias dependencies are reported. While a two level random telegraph signal (RTS) is observed at low voltage, multilevel RTS is observed at higher bias voltages.

Paper Details

Date Published: 15 October 2012
PDF: 8 pages
Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 854924 (15 October 2012); doi: 10.1117/12.926979
Show Author Affiliations
S. Mallik, Indian Institute of Technology Kharagpur (India)
C. Mukherjee, Indian Institute of Technology Kharagpur (India)
C. Mahata, Indian Institute of Technology Kharagpur (India)
G. K. Dalapati, Institute of Materials Research and Engineering, A*STAR (Singapore)
D. Z. Chi, Institute of Materials Research and Engineering, A*STAR (Singapore)
C. K. Maiti, Indian Institute of Technology Kharagpur (India)


Published in SPIE Proceedings Vol. 8549:
16th International Workshop on Physics of Semiconductor Devices
Monica Katiyar; B. Mazhari; Y N Mohapatra, Editor(s)

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