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Proceedings Paper

Scattering analysis of 2DEG in AlGaN/GaN heterostructure grown on Fe doped GaN template
Author(s): Rajesh K Bag; R. Tyagi; P. Mohan; K. Narang; Sudeep Verma; R. Muralidharan
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Paper Abstract

Electron transport properties of the 2-dimensional electron gas (2DEG) in Al0.3Ga0.7 N/AlN/GaN High Electron Mobility Transistor (HEMT) grown on Fe doped GaN template was investigated (a) experimentally using temperature dependent Hall measurements and (b) theoretically by taking into consideration different electron scattering mechanisms like polar optical phonon, dislocation and interface roughness scattering etc. The HEMT structure exhibited very high electron mobilities ~1700 cm2 /V s at room temperature and 13800 cm2 /V s at 30 K with a 2DEG density of ~1.1E13/cm2. From the comparison of theoretical and experimental data, it is shown that interface roughness scattering limits the mobility at low temperature where as the high temperature mobility is limited by Polar Optical phonon scattering.

Paper Details

Date Published: 15 October 2012
PDF: 6 pages
Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85490Q (15 October 2012); doi: 10.1117/12.926974
Show Author Affiliations
Rajesh K Bag, Solid State Physics Lab. (India)
R. Tyagi, Solid State Physics Lab. (India)
P. Mohan, Solid State Physics Lab. (India)
K. Narang, Solid State Physics Lab. (India)
Sudeep Verma, Solid State Physics Lab. (India)
R. Muralidharan, Solid State Physics Lab. (India)


Published in SPIE Proceedings Vol. 8549:
16th International Workshop on Physics of Semiconductor Devices
Monica Katiyar; B. Mazhari; Y N Mohapatra, Editor(s)

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