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Proceedings Paper

Si, SiC homo junctions and n-SiC/p-Si hetero junction: MM-wave performance characteristics
Author(s): S. P. Pati; P. R. Tripathy; S. K. Choudhury; M. Mukharjee; P. Purohit
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Paper Abstract

A recent report on realization/studies of Si-SiC hetero junction has given impetus to explore them for generation of rf power in double drift impact ionization avalanche transit time (IMPATT) mode. MM-wave properties of this hetero junction are compared with corresponding Si and SiC homo .junction. Interesting feature of ionization free n-SiC zone localizes the avalanche zone to less than 10% of depletion zone resulting in diode efficiency around 27% (against only 10-15% for both homo junctions Si and SiC) and three fold high rf negative resistance, which can be therefore termed as promising high rf power source.

Paper Details

Date Published: 15 October 2012
PDF: 4 pages
Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85490P (15 October 2012); doi: 10.1117/12.926955
Show Author Affiliations
S. P. Pati, National Institute of Science and Technology (India)
P. R. Tripathy, Purushottam Institute of Engineering and Technology (India)
S. K. Choudhury, Sundargarh Engineering College (India)
M. Mukharjee, Univ. of Calcutta (India)
P. Purohit, ITM Univ. (India)


Published in SPIE Proceedings Vol. 8549:
16th International Workshop on Physics of Semiconductor Devices
Monica Katiyar; B. Mazhari; Y N Mohapatra, Editor(s)

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