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Proceedings Paper

Growth and Characterization of AlxGa1-xN on GaN/Al2O3
Author(s): Mathaiyan Jayasakthi; Raju Ramesh; Ponnusamy Arivazhagan; Ravi Loganathan; Kandhasamy Prabakaran; Manavaimaran Balaji; Krishnan Baskar
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Paper Abstract

AlGaN is a promising material to develop UVLEDs and HEMT devices due to the direct wide-band gap material. In the present investigation, AlxGa1-xN alloys were grown on c-plane sapphire substrate by MOCVD. Al content x was varied in the composition range 0≤×≤0.6. The thickness and Al composition of the AlGaN was determined by HRXRD. The growth rate decreases on increasing the composition of Al. The critical thickness of pseudomorphic AlGaN layer decreases on increasing the composition. Thick layers resulted in cracks and it is important to grow thick layers with high aluminum content free from crack for deep UV LEDs.

Paper Details

Date Published: 15 October 2012
PDF: 6 pages
Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85492R (15 October 2012); doi: 10.1117/12.926904
Show Author Affiliations
Mathaiyan Jayasakthi, Anna Univ. (India)
Raju Ramesh, Anna Univ. Chennai (India)
Ponnusamy Arivazhagan, Anna Univ. Chennai (India)
Ravi Loganathan, Anna Univ. Chennai (India)
Kandhasamy Prabakaran, Anna Univ. Chennai (India)
Manavaimaran Balaji, Anna Univ. Chennai (India)
Krishnan Baskar, Anna University (India)


Published in SPIE Proceedings Vol. 8549:
16th International Workshop on Physics of Semiconductor Devices
Monica Katiyar; B. Mazhari; Y N Mohapatra, Editor(s)

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