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Proceedings Paper

Device characteristics and parameters of high performance long-channel Ge pMOSFETs with different channel-orientations
Author(s): S. Dutta Gupta; Abhijit Biswas; J. Mitard; G. Eneman; B. De Jaeger; M. Meuris; M. M. Heyns
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Paper Abstract

Device characteristics for long-channel Ge-pMOSFETs with different channel-orientations and figures of merit for analog applications are reported. The electrical characteristics include the capacitance-voltage curve at frequency 500 kHz and the transfer characteristics for both the low and high drain voltages. Various device parameters of Ge pMOSFETs have been extracted utilizing the measured data for both the regular i. e., Ge <110< and oriented i. e., Ge <100< devices with post metallization anneal. The oriented device exhibits augmented transconductance, while output resistance and intrinsic gain show improvement for the regular device. The conductance efficiency is almost same for both the regular and oriented devices in the strong inversion region of operation whereas the parameter exhibits some improvement for regular devices in the weak inversion region.

Paper Details

Date Published: 15 October 2012
PDF: 7 pages
Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 854920 (15 October 2012); doi: 10.1117/12.926877
Show Author Affiliations
S. Dutta Gupta, SERIS (Singapore)
IMEC (Belgium)
KULeuven (Belgium)
Abhijit Biswas, Univ. of Calcutta (India)
IMEC (Belgium)
J. Mitard, IMEC (Belgium)
KULeuven (Belgium)
G. Eneman, IMEC (Belgium)
KULeuven (Belgium)
FWO-Vlaanderen (Belgium)
B. De Jaeger, IMEC (Belgium)
M. Meuris, IMEC (Belgium)
M. M. Heyns, IMEC (Belgium)
KULeuven (Belgium)


Published in SPIE Proceedings Vol. 8549:
16th International Workshop on Physics of Semiconductor Devices
Monica Katiyar; B. Mazhari; Y N Mohapatra, Editor(s)

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