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Proceedings Paper

studies on the dislocation densities of gallium nitride grown by MOCVD
Author(s): Ravi Loganathan; Mathaiyan Jayasakthi; Ponnusamy Arivazhagan; Kandhasamy Prabakaran; Manavaimaran Balaji; Krishnan Baskar
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Paper Abstract

Group III-V nitrides have become versatile semiconducting materials for short wavelength LEDs, high temperature transistors. The growth and device processing of these materials are significant due to unusually high bond energies of nitrides. Inspite of high dislocations densities in the order of 109cm-2 the optical and electronic devices based on nitrides show high performance compared to conventional semiconductor devices. Understanding of the behavior of dislocations in these materials structures are very important for the fabrication of devices. In the present study, GaN was grown on sapphire substrates using MOCVD. The dislocation density of GaN has been estimated by wet etching and HRXRD. The results have been correlated with the growth conditions. The dislocation density of the samples was found to be between 3.5x109cm-2 and 5.0x108cm-2.

Paper Details

Date Published: 15 October 2012
PDF: 6 pages
Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85492Q (15 October 2012); doi: 10.1117/12.926857
Show Author Affiliations
Ravi Loganathan, Anna Univ. Chennai (India)
Mathaiyan Jayasakthi, Anna Univ. Chennai (India)
Ponnusamy Arivazhagan, Anna Univ. Chennai (India)
Kandhasamy Prabakaran, Anna Univ. Chennai (India)
Manavaimaran Balaji, Anna Univ. Chennai (India)
Krishnan Baskar, Anna Univ. Chennai (India)

Published in SPIE Proceedings Vol. 8549:
16th International Workshop on Physics of Semiconductor Devices
Monica Katiyar; B. Mazhari; Y N Mohapatra, Editor(s)

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