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Proceedings Paper

Optimization of cross-sectional aspect ratio of ballistic Si nanobar MOSFETs for superior current-voltage characteristics
Author(s): Basudev Nag Chowdhury; Puja Singh; Sanatan Chattopadhyay
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Paper Abstract

Si nanobar field effect transistors (Si-NBFETs) have emerged as one of the potential candidates in the present era of nano-structured electronic devices. In the current work, the carrier transport in ballistic Si-NBFETs is modeled by constructing a relevant Hamitonian matrix, where the coupling of source and drain with the channel is incorporated by the corresponding self-energy matrices. The Hamiltonian is solved by non-equilibrium Green’s function formalism. The current-voltage characteristics for different width and thickness of the nanobar channel are investigated in detail. Comparative study on drive current and leakage current for various transverse dimensions suggests a cross-sectional design window with an aspect ratio in the range of 1.3-1.6 to be appropriate for superior performance.

Paper Details

Date Published: 15 October 2012
PDF: 6 pages
Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85491X (15 October 2012); doi: 10.1117/12.926784
Show Author Affiliations
Basudev Nag Chowdhury, Univ. of Calcutta (India)
Puja Singh, Univ. of Calcutta (India)
Sanatan Chattopadhyay, Univ. of Calcutta (India)

Published in SPIE Proceedings Vol. 8549:
16th International Workshop on Physics of Semiconductor Devices
Monica Katiyar; B. Mazhari; Y N Mohapatra, Editor(s)

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