Share Email Print

Proceedings Paper

60 and 100 MeV oxygen ion irradiation effects on electrical characteristics of bipolar transistor
Author(s): K. S. Krishnakumar; C. M. Dinesh; . Ramani; S. A. Khan; D. Kanjilal
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

60 and 100 MeV Oxygen ion induced forward current gain degradation on 2N 3866 transistor is investigated by making I-V measurements before and after irradiation. It clearly shows that the decrease in gain in 60 MeV O-ion transistor is drastic, hence depicts that the device is vulnerable for low energy irradiation. The observed degradation is mainly due to total ionizing dose. The ionization leading to an increase in the total base current that eventually reduces the current gain. C-V measurements are made to estimate the effect of irradiation on the doping concentration of the devices. A plot of (1/C2) versus voltage shows that the doping concentration of the basecollector junction of the transistor increases upon oxygen ion irradiation.

Paper Details

Date Published: 15 October 2012
PDF: 6 pages
Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85490M (15 October 2012); doi: 10.1117/12.926278
Show Author Affiliations
K. S. Krishnakumar, Bangalore Univ. (India)
C. M. Dinesh, Govt. First Grade College (India)
. Ramani, Bangalore Univ. (India)
S. A. Khan, Inter Univ. Accelerator Ctr. (India)
D. Kanjilal, Inter Univ. Accelerator Ctr. (India)

Published in SPIE Proceedings Vol. 8549:
16th International Workshop on Physics of Semiconductor Devices
Monica Katiyar; B. Mazhari; Y N Mohapatra, Editor(s)

© SPIE. Terms of Use
Back to Top