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Proceedings Paper

Effects of Size Nonuniformity on the Optical Transitions in a set of Realistic InxGa1-xN/GaN Quantum Dots, having a Gaussian Distribution
Author(s): Sanjib Kabi; Siddhartha Panda; Dipankar Biswas
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Paper Abstract

The absorption spectra of semiconductor quantum dots (QDs) are expected to be a series of δ-function-like discrete lines due to the nature of the density of states. In a realistic III–V QD system, the absorption spectra is the superimposition of the contribution from each individual dot and the overall behavior is modeled by considering a Gaussian size distribution. In this paper, we study and present the dependence of the Gaussian nature of the absorption spectra of InXGa1−XN/GaN QD systems on the dot size distribution. The dots were approximated as elongated rectangular boxes having finite potentials at the boundaries. The optical transitions and absorption spectra of InXGa1−XN/GaN QDs that have a square base and the variation of the height is Gaussian, are computed and analyzed

Paper Details

Date Published: 15 October 2012
PDF: 5 pages
Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85491V (15 October 2012); doi: 10.1117/12.925882
Show Author Affiliations
Sanjib Kabi, Univ. of Calcutta (India)
Siddhartha Panda, Univ. of Calcutta (India)
Dipankar Biswas, Univ. of Calcutta (India)


Published in SPIE Proceedings Vol. 8549:
16th International Workshop on Physics of Semiconductor Devices
Monica Katiyar; B. Mazhari; Y N Mohapatra, Editor(s)

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