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Proceedings Paper

Band gap engineering of hydrogenated amorphous carbon thin films for solar cell application
Author(s): Neeraj Dwivedi; Sushil Kumar; Saurabh Dayal; C. M. S. Rauthan; O. S. Panwar; Hitendra K. Malik
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Paper Abstract

In this work, self bias variation, nitrogen introduction and oxygen plasma (OP) treatment approaches have been used for tailoring the band gap of hydrogenated amorphous carbon (a-C:H) thin films. The band gap of a-C:H and modified a- C:H films is varied in the range from 1.25 eV to 3.45 eV, which is found to be nearly equal to the full solar spectrum (1 eV- 3.5 eV). Hence, such a-C:H and modified a-C:H films are found to be potential candidate for the development of full spectrum solar cells. Besides this, computer aided simulation with considering variable band gap a-C:H and modified a- C:H films as window layer for amorphous silicon p-i-n solar cells is also performed by AFORS-HET software and maximum efficiency as ~14 % is realized. Since a-C:H is hard material, hence a-C:H and modified a-C:H films as window layer may avoid the use of additional hard and protective coating particularly in n-i-p configuration.

Paper Details

Date Published: 15 October 2012
PDF: 6 pages
Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85493A (15 October 2012); doi: 10.1117/12.925536
Show Author Affiliations
Neeraj Dwivedi, CSIR-National Physical Lab. (India)
Indian Institute of Technology (India)
Sushil Kumar, CSIR-National Physical Lab. (India)
Saurabh Dayal, CSIR-National Physical Lab. (India)
C. M. S. Rauthan, CSIR-National Physical Lab. (India)
O. S. Panwar, CSIR-National Physical Lab. (India)
Hitendra K. Malik, Indian Institute of Technology (India)


Published in SPIE Proceedings Vol. 8549:
16th International Workshop on Physics of Semiconductor Devices
Monica Katiyar; B. Mazhari; Y N Mohapatra, Editor(s)

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