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Proceedings Paper

An Analytical Modeling Approach for a Gate All Around (GAA) Tunnel Field Effect Transistor (TFET)
Author(s): Rakhi Narang; Manoj Saxena; R. S. Gupta; Mridula Gupta
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Paper Abstract

An analytical model for a gate all around (GAA) Tunnel Field Effect Transistor (TFET) having circular and square cross section geometry has been proposed in this work describing the important device electrostatic parameters i.e. Surface Potential, Electric Field and Energy Band profile. Further, the model is extended for both a p-i-n and p-n-p-n architecture keeping in view the advantages offered by a p-n-p-n architecture (also known as tunnel source or halo doped TFET) over a p-i-n based TFET. The results obtained from the model have been validated with results obtained through Silvaco ATLAS 3D device simulation software.

Paper Details

Date Published: 15 October 2012
PDF: 6 pages
Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 854906 (15 October 2012); doi: 10.1117/12.925534
Show Author Affiliations
Rakhi Narang, Univ. of Delhi (India)
Manoj Saxena, Univ. of Delhi (India)
R. S. Gupta, Maharaja Agrasen Institute of Technology (India)
Mridula Gupta, Univ. of Delhi (India)


Published in SPIE Proceedings Vol. 8549:
16th International Workshop on Physics of Semiconductor Devices
Monica Katiyar; B. Mazhari; Y N Mohapatra, Editor(s)

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