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Proceedings Paper

Influence of localised charges on the temperature sensitivity of Si nanowire MOSFET
Author(s): Rajni Gautam; Manoj Saxena; R. S. Gupta; Mridula Gupta
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Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, ; doi: 10.1117/12.925532
Show Author Affiliations
Rajni Gautam, Univ. of Delhi (India)
Manoj Saxena, Univ. of Delhi (India)
R. S. Gupta, Maharaja Agrasen Institute Of Technology (India)
Mridula Gupta, Univ. of Delhi (India)


Published in SPIE Proceedings Vol. 8549:
16th International Workshop on Physics of Semiconductor Devices
Monica Katiyar; B. Mazhari; Y N Mohapatra, Editor(s)

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