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Proceedings Paper

Line width roughness control for EUV patterning
Author(s): Karen Petrillo; George Huang; Dominic Ashworth; Liping Ren; K.-Y. Cho; Stefan Wurm; Shinichiro Kawakami; Lior Huli; Shannon Dunn; Akiteru Ko
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Paper Abstract

Controlling line width roughness (LWR) is a critical issue in extreme ultraviolet lithography (EUVL). High sensitivity, high resolution, and low LWR are required for EUV lithography resist. However, simultaneously achieving optimal properties through chemical tuning alone is difficult. The track process is one of the factors that impacts LWR. Enhancing track processes in EUV lithography is thus critical to controlling LWR. This paper describes an approach to mitigating LWR based on optimizing track-based and etch-based processes. It also presents the results of our newly developed track-based smoothing process as well as the results of combining several track-based techniques. The latest LWR performance from using track-based techniques, optimized track processes, and etch-based techniques will be highlighted.

Paper Details

Date Published: 23 March 2012
PDF: 8 pages
Proc. SPIE 8322, Extreme Ultraviolet (EUV) Lithography III, 83222H (23 March 2012); doi: 10.1117/12.925442
Show Author Affiliations
Karen Petrillo, SEMATECH North (United States)
George Huang, SEMATECH North (United States)
Dominic Ashworth, SEMATECH North (United States)
Liping Ren, SEMATECH North (United States)
K.-Y. Cho, SEMATECH North (United States)
Stefan Wurm, SEMATECH North (United States)
Shinichiro Kawakami, TEL Technology Ctr., America, LLC (United States)
Lior Huli, TEL Technology Ctr., America, LLC (United States)
Shannon Dunn, TEL Technology Ctr., America, LLC (United States)
Akiteru Ko, TEL Technology Ctr., America, LLC (United States)

Published in SPIE Proceedings Vol. 8322:
Extreme Ultraviolet (EUV) Lithography III
Patrick P. Naulleau; Obert R. Wood, Editor(s)

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