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Proceedings Paper

Effect of capture and escape rates of carriers and well parameters on the performance of multi-quantum well solar cell
Author(s): N. R. Das; Piue Ghosh; Suchismita Mitra
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Paper Abstract

We calculate the short-circuit current density for an AlxGa1-xAs-GaAs multi-quantum well (MQW) solar cell by solving the rate equations and considering the effects of lifetime, escape time, capture time and transport time of carriers. The contributions from bulk and well regions of the cell are calculated separately. Short-circuit current density and efficiency are computed and plotted for different material and device parameters. Results indicate that the active layer thickness can be optimally chosen to obtain the maximum conversion efficiency keeping other parameters unchanged.

Paper Details

Date Published: 15 October 2012
PDF: 6 pages
Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 854939 (15 October 2012); doi: 10.1117/12.925342
Show Author Affiliations
N. R. Das, Univ. of Calcutta (India)
Piue Ghosh, Univ. of Calcutta (India)
Suchismita Mitra, Univ. of Calcutta (India)


Published in SPIE Proceedings Vol. 8549:
16th International Workshop on Physics of Semiconductor Devices
Monica Katiyar; B. Mazhari; Y N Mohapatra, Editor(s)

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