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Proceedings Paper

Role of diffusion and parasitic effects on the frequency response of a Si-CMOS photodetector
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Paper Abstract

In this paper, the frequency response of a VLSI compatible Si-CMOS p-i-n photodetector suitable for high-speed, lowvoltage operation is studied. The model is developed considering the effects of diffusion of carriers from the substrate region and the parasitic elements due to the presence of multiple diodes in lateral configuration. The current density is calculated considering square-area photodetector. Results indicate the possibility of optimum designs to maximize 3dB bandwidth.

Paper Details

Date Published: 15 October 2012
PDF: 6 pages
Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85492N (15 October 2012); doi: 10.1117/12.925284
Show Author Affiliations
Paulami Rakshit, Institute of Radio Physics and Electronics (India)
N. R. Das, Institute of Radio Physics and Electronics (India)


Published in SPIE Proceedings Vol. 8549:
16th International Workshop on Physics of Semiconductor Devices
Monica Katiyar; B. Mazhari; Y N Mohapatra, Editor(s)

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