Share Email Print

Proceedings Paper

Origin and characterization of traps in organic semiconductor thin films
Author(s): Akanksha Sharma; Sarita Yadav; Subhasis Ghosh
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Capacitance based spectroscopic techniques have been used to characterize defects in organic Schottky diode based on copper phthalocyanine. Traps have been created by varying the deposition flux. The high deposition flux induces the structural disorder evident from the broad and low intensity X-ray peak. These structural disorders give rise to the traps that clearly shows its signature in C-T characteristics. The step in temperature stimulated capacitance (TSCAP) measurements provides the information of trap level. It is shown that structural disorder is responsible for traps in CuPc thin films and controls the electrical characteristics of two and three terminal devices.

Paper Details

Date Published: 15 October 2012
PDF: 3 pages
Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 854932 (15 October 2012); doi: 10.1117/12.925269
Show Author Affiliations
Akanksha Sharma, Jawaharlal Nehru Univ. (India)
Sarita Yadav, Jawaharlal Nehru Univ. (India)
Subhasis Ghosh, Jawaharlal Nehru Univ. (India)

Published in SPIE Proceedings Vol. 8549:
16th International Workshop on Physics of Semiconductor Devices
Monica Katiyar; B. Mazhari; Y N Mohapatra, Editor(s)

© SPIE. Terms of Use
Back to Top