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Proceedings Paper

The influence of 175 MeV nickel ion irradiation on the electrical characteristics of power transistors (HF13)
Author(s): N. Pushpa; K. C. Praveen; A. P. Gnana Prakash; P. S. Naik; S. K. Gupta; D. Revannasiddaiah
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Paper Abstract

The dc electrical characteristics of NPN RF power transistors were studied systematically before and after 175 MeV Ni13+ ion and Co-60 gamma irradiation in the dose range from 100 krad to 100 Mrad. The transistor parameters such as excess base current (ΔIB= IBpost-IBpre), dc current gain (hFE), and collector-saturation current (ICSat) were studied. The base current (IB) was found to increase significantly after irradiation and this in turn decreases the hFE of the transistors. Further, the output characteristics of the irradiated devices exhibit the decrease in the collector current at the saturation region (ICSat) with increase of radiation dose.

Paper Details

Date Published: 15 October 2012
PDF: 3 pages
Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85490K (15 October 2012); doi: 10.1117/12.925199
Show Author Affiliations
N. Pushpa, The Univ. of Mysore (India)
K. C. Praveen, The Univ. of Mysore (India)
A. P. Gnana Prakash, The Univ. of Mysore (India)
P. S. Naik, The Univ. of Mysore (India)
S. K. Gupta, Bhabha Atomic Research Ctr. (India)
D. Revannasiddaiah, The Univ. of Mysore (India)


Published in SPIE Proceedings Vol. 8549:
16th International Workshop on Physics of Semiconductor Devices
Monica Katiyar; B. Mazhari; Y N Mohapatra, Editor(s)

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