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Study of energy eigenvalues and density of states of carriers in a triangular quantum wire
Author(s): Arpan Deyasi; S. Bhattacharyya; N. R. Das
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Paper Abstract

Energy eigenvalues and density of states of carriers in a finite barrier triangular quantum wire embedded inside a rectangular quantum wire are numerically investigated using finite difference technique (FD-Q). Time-independent Schrödinger’s equation is solved with appropriate boundary conditions for computation of lowest three eigenstates. The wire is made of lower bandgap GaAs material surrounded by wider bandgap AlxGa1-xAs, and the analysis is carried out by taking into consideration of the conduction band discontinuity and effective mass mismatch at the boundaries. The eigenvalues and the density of states are plotted as function of wire dimension and mole fraction (x). The results are also compared with those obtained using rectangular quantum wire.

Paper Details

Date Published: 15 October 2012
PDF: 6 pages
Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85491Q (15 October 2012); doi: 10.1117/12.924994
Show Author Affiliations
Arpan Deyasi, RCC Institute of Information Technology (India)
S. Bhattacharyya, Asansol Engineering College (India)
N. R. Das, Calcutta Univ. (India)

Published in SPIE Proceedings Vol. 8549:
16th International Workshop on Physics of Semiconductor Devices
Monica Katiyar; B. Mazhari; Y N Mohapatra, Editor(s)

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