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Proceedings Paper

Modeling of photodependent capacitance for short gate-length ion-implanted GaAs MESFETs
Author(s): Shweta Tripathi; S. Jit
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Paper Abstract

This paper presents an analytical model for C-V characteristics of short gate-length GaAs MESFET under illuminated condition. The non-analytic Gaussian doping profile commonly considered for the channel doping of an ion-implanted GaAs MESFET has been replaced by an analytic Gaussian-like function for the simplicity of the present model. When the computed results of the proposed model are compared with numerical simulation data obtained by ATLAS™ device simulator, an encouraging correspondence between the two lends credibility to our model.

Paper Details

Date Published: 15 October 2012
PDF: 6 pages
Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85492L (15 October 2012); doi: 10.1117/12.924519
Show Author Affiliations
Shweta Tripathi, Banaras Hindu Univ. (India)
S. Jit, Banaras Hindu Univ. (India)


Published in SPIE Proceedings Vol. 8549:
16th International Workshop on Physics of Semiconductor Devices
Monica Katiyar; B. Mazhari; Y N Mohapatra, Editor(s)

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