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Proceedings Paper

Characterization of silicide-silicon interface contact resistivity using 1-D dual transmission line model approximation of modified cross bridge kelvin measurements
Author(s): Ankr Arya; Balaji Jayaraman; Mohit Bajaj; Abhisek Dixit; Cung Tran
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Paper Abstract

Conventional 1D single level transmission line model (TLM) to extract silicide-silicon contact resistivity does not take into account silicide sheet resistance. In this paper, 1D dual level TLM model approximation is used for extraction of the silicide sheet resistance and silicide-silicon contact resistivity. Experiments involving Platinum content increase in Nickel Silicide and pre-silicide Carbon implant in Silicon Germanium (SiGe) PMOS is analyzed using our model.

Paper Details

Date Published: 15 October 2012
PDF: 3 pages
Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85493J (15 October 2012); doi: 10.1117/12.924514
Show Author Affiliations
Ankr Arya, IBM Semiconductor Research and Development Ctr. (India)
Balaji Jayaraman, IBM Semiconductor Research and Development Ctr. (India)
Mohit Bajaj, IBM Semiconductor Research and Development Ctr. (India)
Abhisek Dixit, IBM Semiconductor Research and Development Ctr. (India)
Cung Tran, IBM Semiconductor Research and Development Ctr. (United States)


Published in SPIE Proceedings Vol. 8549:
16th International Workshop on Physics of Semiconductor Devices
Monica Katiyar; B. Mazhari; Y N Mohapatra, Editor(s)

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