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Proceedings Paper

Study of electrical conductivity and scale theory in metallic n-type GeSb
Author(s): Abdelghani Sybous; Abdelhamid El Kaaouachi; Abdelfattah Narjis; Lhoussine Limouny; Said Dlimi; Gerard Biskupski
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Paper Abstract

We present measurements of the electrical conductivity of barely metallic n-type GeSb that are driven to the metal-insulator transition (MIT) by impurity concentration. The experiments were carried out at low temperature in the range (4.2 -0.066 K) and with impurity concentrations up 6.41017 cm−3 . On the metallic side of the MIT, the electrical conductivity is found to behave like σ =σ0 + mT1/2 down to 66 mK. Physical explanation to the temperature dependence of the conductivity is given in metallic side of the MIT using a competition between two effects involved in the mechanisms of conduction, like electron-electron interaction effect, and weak localization effect.

Paper Details

Date Published: 27 September 2012
PDF: 8 pages
Proc. SPIE 8459, Physical Chemistry of Interfaces and Nanomaterials XI, 84590W (27 September 2012); doi: 10.1117/12.924339
Show Author Affiliations
Abdelghani Sybous, Univ. Ibn Zohr (France)
Abdelhamid El Kaaouachi, Univ. Ibn Zohr (Morocco)
Abdelfattah Narjis, Univ. Ibn Zohr (Morocco)
Lhoussine Limouny, Univ. Ibn Zohr (Morocco)
Said Dlimi, Univ. Ibn Zohr (Morocco)
Gerard Biskupski, Univ. des Sciences et Technologies de Lille (France)

Published in SPIE Proceedings Vol. 8459:
Physical Chemistry of Interfaces and Nanomaterials XI
Jenny Clark; Carlos Silva, Editor(s)

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