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Proceedings Paper

Positive magnetoresistance in hydrogenated amorphous alloys silicon nickel a- Si1-yNiy:H at very low temperature with magnetic field
Author(s): Abdelfattah Narjis; Abdelhamid El Kaaouachi; Abdelghani Sybous; Lhoussine Limouny; Gerard Biskupski; Said Dlimi
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Paper Abstract

We present results of an experimental study of magnetoresistance phenomenon in an amorphous siliconnickel alloys a-Si1-yNiy:H (where y=0.23) on the insulating side of the metal-insulator transition (MIT) in presence of magnetic field up to 4,5T and at very low temperature. The electrical resistivity is found to follow the Efros-Shklovskii Variable Range Hopping regime (ES VRH) with T -1/2. This behaviour indicates the existence of the Coulomb gap (CG) near the Fermi level.

Paper Details

Date Published: 27 September 2012
PDF: 5 pages
Proc. SPIE 8459, Physical Chemistry of Interfaces and Nanomaterials XI, 84590U (27 September 2012); doi: 10.1117/12.924297
Show Author Affiliations
Abdelfattah Narjis, Univ. Ibn Zohr (Morocco)
Abdelhamid El Kaaouachi, Univ. Ibn Zohr (Morocco)
Abdelghani Sybous, Univ. Ibn Zohr (Morocco)
Lhoussine Limouny, Univ. Ibn Zohr (Morocco)
Gerard Biskupski, Univ. des de Lille I (France)
Said Dlimi, Univ. Ibn Zohr (Morocco)

Published in SPIE Proceedings Vol. 8459:
Physical Chemistry of Interfaces and Nanomaterials XI
Jenny Clark; Carlos Silva, Editor(s)

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