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Proceedings Paper

40Gbit/s germanium waveguide photodetector on silicon
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Paper Abstract

We report a Germanium lateral pin photodiode integrated with selective epitaxy at the end of silicon waveguide. A very high optical bandwidth estimated at 120GHz is shown, with internal responsivity as high as 0.8A/W at 1550nm wavelength. Open eye diagram at 40Gb/s was obtained under zero-bias at wavelength of 1.55μm.

Paper Details

Date Published: 8 May 2012
PDF: 7 pages
Proc. SPIE 8431, Silicon Photonics and Photonic Integrated Circuits III, 84310A (8 May 2012); doi: 10.1117/12.923854
Show Author Affiliations
Léopold Virot, Institut d'Electronique Fondamentale, CNRS, Univ. Paris-Sud (France)
CEA-LETI-Minatec (France)
STMicroelectronics (France)
Laurent Vivien, Institut d'Electronique Fondamentale, CNRS, Univ. Paris-Sud (France)
Andreas Polzer, Vienna Univ. of Technology (Austria)
Delphine Marris-Morini, Institut d'Electronique Fondamentale, CNRS, Univ. Paris-Sud (France)
Johann Osmond, Institut d'Electronique Fondamentale, CNRS, Univ. Paris-Sud (France)
Jean Michel Hartmann, CEA-LETI-Minatec (France)
Paul Crozat, Institut d'Electronique Fondamentale, CNRS, Univ. Paris-Sud (France)
Eric Cassan, Institut d'Electronique Fondamentale, CNRS, Univ. Paris-Sud (France)
Charles Baudot, STMicroelectronics (France)
Christophe Kopp, CEA-LETI-Minatec (France)
Frédéric Boeuf, STMicroelectronics (France)
Horst Zimmermann, Vienna Univ. of Technology (Austria)
Jean Marc Fédéli, CEA-LETI-Minatec (France)


Published in SPIE Proceedings Vol. 8431:
Silicon Photonics and Photonic Integrated Circuits III
Laurent Vivien; Seppo K. Honkanen; Lorenzo Pavesi; Stefano Pelli, Editor(s)

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