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Proceedings Paper

Double exposure as a method to correct on-wafer CD variations: a proposal
Author(s): Arthur Hotzel; Holger Bald
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Paper Abstract

Keeping across-field CD variation on the wafer within the tight limits imposed by 28nm and other advanced technologies is a challenge, particularly in a foundry where designs of different customers are realized. We propose a cost-efficient, fast, and flexible method to improve CD uniformity and correct reticle or design-induced variation, by applying a second exposure to the wafer, in the form of a grey scale map created with a low grade correction reticle. Compared to CD correction by subsequent modification of the primary reticle, this method has the potential of much higher spatial resolution and simpler logistics, which make it an attractive alternative especially for prototyping and lowvolume production.

Paper Details

Date Published: 16 April 2012
PDF: 12 pages
Proc. SPIE 8352, 28th European Mask and Lithography Conference, 83520D (16 April 2012); doi: 10.1117/12.923649
Show Author Affiliations
Arthur Hotzel, GLOBALFOUNDRIES Dresden Module One LLC & Co. KG (Germany)
Holger Bald, GLOBALFOUNDRIES Dresden Module One LLC & Co. KG (Germany)


Published in SPIE Proceedings Vol. 8352:
28th European Mask and Lithography Conference
Uwe F.W. Behringer; Wilhelm Maurer, Editor(s)

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