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Proceedings Paper

Shallow donor near a semiconductor surface in the presence of locally spherical scanning tunneling microscope tip
Author(s): A. P Djotyan; A. A. Avetisyan; Y. L. Hao; F. M Peeters
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Paper Abstract

We developed a variational approach to investigate the ground state energy and the extend of the wavefunction of a neutral donor located near a semiconductor surface in the presence of scanning tunneling microscope (STM) metallic tip. We apply the effective mass approximation and use a variational wavefunction that takes into account the influence of all image charges that arise due to the presence of a metallic tip. The behavior of the ground state energy when the tip approaches the semiconductor surface is investigated.

Paper Details

Date Published: 25 January 2012
PDF: 8 pages
Proc. SPIE 8414, Photonics and Micro- and Nano-structured Materials 2011, 84140L (25 January 2012); doi: 10.1117/12.923562
Show Author Affiliations
A. P Djotyan, Yerevan State Univ. (Armenia)
A. A. Avetisyan, Yerevan State Univ. (Armenia)
Y. L. Hao, Antwerp Univ. (Belgium)
F. M Peeters, Antwerp Univ. (Belgium)


Published in SPIE Proceedings Vol. 8414:
Photonics and Micro- and Nano-structured Materials 2011
Rafael Kh. Drampyan, Editor(s)

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