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Proceedings Paper

Removal of misfit dislocations from mismatched layers in heterostructures
Author(s): Mileta M. Arakelyan
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Paper Abstract

The method of the misfit dislocation removal from working area of the devices on heterostructures is theoretically offered. The chainlet of the edge dislocation (one-dimensional soliton-soliton bound state) is formed in substrate and film border by special preliminary processing. The stress field of such chainlet pushes away a misfit dislocation incipient on the borders of the heterostructures. By numerical experiment it is shown that the stress field of a chainlet is compressed in a sliding direction and it increases in a perpendicular direction, when the velocity is increased. It is possible to influence locally on the given dislocation varying the parameters of the system.

Paper Details

Date Published: 25 January 2012
PDF: 5 pages
Proc. SPIE 8414, Photonics and Micro- and Nano-structured Materials 2011, 84140K (25 January 2012); doi: 10.1117/12.923228
Show Author Affiliations
Mileta M. Arakelyan, Yerevan State Univ. (Armenia)

Published in SPIE Proceedings Vol. 8414:
Photonics and Micro- and Nano-structured Materials 2011
Rafael Kh. Drampyan, Editor(s)

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