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Proceedings Paper

Lateral epitaxial overgrowth of ZnO films on a seed layer buffered MgAl2O4 substrate in water
Author(s): Y. B. Zhang; S. Li; G. K. L. Goh
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Paper Abstract

ZnO films with exceptional homogeneity and surface smoothness have been hydrothermally grown by using lateral epitaxial overgrowth (LEO). A thin ZnO seed layer film was beforehand grown in water at 90°C on a MgAl2O4 (111) substrate as a buffer layer. The LEO method using a mask with an optimized ratio of window to wing was then employed to reduce threading dislocations at the boundaries of crystal mosaic in the epitaxial films. The dislocations arose from unmasked window and coalescence of masked wings while they were seldom present in the wing area. The average dislocation density significantly reduced from 1.4 x 109 to 2.3 x 108 cm-2 via the LEO. However, it decreased slightly to 1 x 108 cm-2 after a double LEO applied for further dislocation reduction since new threading dislocations were produced at the coalescence of wings from the LEO.

Paper Details

Date Published: 2 April 2012
PDF: 8 pages
Proc. SPIE 8409, Third International Conference on Smart Materials and Nanotechnology in Engineering, 84090P (2 April 2012); doi: 10.1117/12.923034
Show Author Affiliations
Y. B. Zhang, The Univ. of New South Wales (Australia)
S. Li, The Univ. of New South Wales (Australia)
G. K. L. Goh, A*STAR Institute of Materials Research and Engineering (Singapore)


Published in SPIE Proceedings Vol. 8409:
Third International Conference on Smart Materials and Nanotechnology in Engineering
Jinsong Leng; Yoseph Bar-Cohen; In Lee; Jian Lu, Editor(s)

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