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Proceedings Paper

Ring resonator silicon optical modulator based on interleaved PN junctions
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Paper Abstract

We present first experimental results of a high-speed silicon optical modulator based on carrier depletion in interleaved PN junctions oriented in the waveguide direction. The modulator is integrated in a ring resonator of radius 50 μm. The modulator is characterized using a laser beam at 1.55 μm for TE and TM polarizations, and extinction ratios as high as 11 dB and 10 dB in in TE- and TM-polarizations, respectively, obtained between 0 and -10 V. At 10 Gbit/s extinction ratios of 4.1 dB and 2.7 dB for TE- and TM-polarization, respectively, are experimentally demonstrated.

Paper Details

Date Published: 10 May 2012
PDF: 6 pages
Proc. SPIE 8431, Silicon Photonics and Photonic Integrated Circuits III, 84310J (10 May 2012); doi: 10.1117/12.922936
Show Author Affiliations
Melissa Ziebell, Institut d'Electronique Fondamentale, CNRS, Univ. Paris-Sud (France)
Delphine Marris-Morini, Institut d'Electronique Fondamentale, CNRS, Univ. Paris-Sud (France)
Gilles Rasigade, Institut d'Electronique Fondamentale, CNRS, Univ. Paris-Sud (France)
Jean-Marc Fédéli, CEA, LETI, Minatec (France)
Eric Cassan, Institut d'Electronique Fondamentale, CNRS, Univ. Paris-Sud (France)
Laurent Vivien, Institut d'Electronique Fondamentale, CNRS, Univ. Paris-Sud (France)


Published in SPIE Proceedings Vol. 8431:
Silicon Photonics and Photonic Integrated Circuits III
Laurent Vivien; Seppo K. Honkanen; Lorenzo Pavesi; Stefano Pelli, Editor(s)

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