Share Email Print
cover

Proceedings Paper

Quantum-structured III-V energy harvesting devices: pathways to ultra-high conversion efficiencies
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Quantum-structured photovoltaic devices incorporating III-V quantum wells or quantum dots have the potential to dramatically increase the performance of energy harvesting devices. In this work, the dark current of high-voltage InGaAs quantum well structures is characterized, and the underlying saturation current density analyzed as a function of effective energy gap. Analysis of the current-voltage characteristics suggests that these advanced quantum well device structures are operating in a regime of suppressed radiative recombination. High-voltage output from quantum-structured energy harvesting devices, coupled with advances in the field of light trapping, provides a pathway for achieving ultra-high conversion efficiencies.

Paper Details

Date Published: 24 May 2012
PDF: 9 pages
Proc. SPIE 8377, Energy Harvesting and Storage: Materials, Devices, and Applications III, 83770E (24 May 2012); doi: 10.1117/12.922917
Show Author Affiliations
Roger E. Welser, Magnolia Optical Technologies, Inc. (United States)
Magnolia Solar, Inc. (United States)
Ashok K. Sood, Magnolia Optical Technologies, Inc. (United States)
Magnolia Solar, Inc. (United States)
Nibir K. Dhar, Defense Advanced Research Projects Agency (United States)
Priyalal S. Wijewarnasuriya, U.S. Army Research Lab. (United States)


Published in SPIE Proceedings Vol. 8377:
Energy Harvesting and Storage: Materials, Devices, and Applications III
Nibir K. Dhar; Priyalal S. Wijewarnasuriya; Achyut K. Dutta, Editor(s)

© SPIE. Terms of Use
Back to Top