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Proceedings Paper

Laterally-coupled high power GaSb distributed feedback lasers fabricated by nanoimprint lithography at 2 um wavelength
Author(s): K. Haring; J. Paajaste; R. Koskinen; S. Suomalainen; J. Viheriälä; A. Laakso; T. Niemi; M. Guina
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Paper Abstract

Here we present a device concept utilizing GaSb-based laterally-coupled DFB-lasers. Fabrication procedure to define the ridge waveguide and the grating makes use of nanoimprint lithography. This technology addresses issues related to mass fabrication and cost of the DFB-lasers. We demonstrate state-of-the-art devices on a range of wavelengths around 2 μm. These lasers exhibit single-mode operation with a maximum side-mode suppression ratio of more than 55 dB and high output power of ~25 mW.

Paper Details

Date Published: 10 May 2012
PDF: 6 pages
Proc. SPIE 8432, Semiconductor Lasers and Laser Dynamics V, 84320T (10 May 2012); doi: 10.1117/12.922811
Show Author Affiliations
K. Haring, Tampere Univ. of Technology (Finland)
J. Paajaste, Tampere Univ. of Technology (Finland)
R. Koskinen, Tampere Univ. of Technology (Finland)
S. Suomalainen, Tampere Univ. of Technology (Finland)
J. Viheriälä, Tampere Univ. of Technology (Finland)
A. Laakso, Tampere Univ. of Technology (Finland)
T. Niemi, Tampere Univ. of Technology (Finland)
M. Guina, Tampere Univ. of Technology (Finland)


Published in SPIE Proceedings Vol. 8432:
Semiconductor Lasers and Laser Dynamics V
Krassimir Panajotov; Marc Sciamanna; Angel Valle; Rainer Michalzik, Editor(s)

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