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Proceedings Paper

The effects of strain on indirect absorption in Ge/SiGe quantum wells
Author(s): L. Lever; Z. Ikonić; R. W. Kelsall
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Paper Abstract

We calculate the conduction band electron scattering rates from the Γ-valley into the indirect valleys in germanium, and use this to determine the strength of the indirect absorption in Ge/SiGe quantum well heterostructures. This is done as a function of the in-plane compressive strain in the Ge quantum wells, which results from pseudomorphic growth on a SiGe virtual substrate. This compressive strain results in the Δ valleys becoming available as destination states for scattering, which leads to a reduction in the Γ-valley lifetime. We calculate the indirect absorption and lifetime broadening of excitonic peaks, and show that indirect absorption decreases as the Ge fraction in the virtual substrate increases. We conclude that the Ge fraction of the SiGe virtual substrate should be approximately 95% or larger for optimum electroabsorption performance of Ge/SiGe quantum wells.

Paper Details

Date Published: 10 May 2012
PDF: 8 pages
Proc. SPIE 8431, Silicon Photonics and Photonic Integrated Circuits III, 84310M (10 May 2012); doi: 10.1117/12.922680
Show Author Affiliations
L. Lever, Univ. of Leeds (United Kingdom)
Z. Ikonić, Univ. of Leeds (United Kingdom)
R. W. Kelsall, Univ. of Leeds (United Kingdom)

Published in SPIE Proceedings Vol. 8431:
Silicon Photonics and Photonic Integrated Circuits III
Laurent Vivien; Seppo K. Honkanen; Lorenzo Pavesi; Stefano Pelli, Editor(s)

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