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Proceedings Paper

Full wafer metrology for chemically graded thin films
Author(s): Marc Jobin; Stéphane Jotterand; Cédric Pellodi; Sergio dos Santos; Cosmin Silviu Sandu; Estelle Wagner; Giacomo Benvenuti
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Paper Abstract

Combinatorial CBVD (Chemical Beam Vapor Deposition) is a thin film deposition technology which has the ability to produce multi-element thin films with large controlled composition spread gradients. If functional characterizations can be carried out systematically and rapidly on such graded films over full wafers, they enable to identify precisely the best film composition for a given application, and CBVD then easily allows for the deposition of the optimized film homogeneously on large wafers. In this article, we demonstrate the efficiency of such a process development based on the optimization of new Transparent Conductive Oxide thin films (TCO) of few % Nb doped TiO2. We have developed a full wafer metrology instrument which maps the optical thickness and the sheet resistance with a lateral resolution below 400um. We discuss the performance of various algorithms to extract the optical thickness from the white light reflectance measurement in the case of very small thickness. The sheet resistance is measured with an array of four AFM-like conductive cantilevers, allowing accurate sheet resistance (R) measurement where the standard tungsten four probes destroy porous thin oxide films. Application of these measurements to several Nb doped TiO2 films deposited on 4" wafer by CBVD is presented.

Paper Details

Date Published: 9 May 2012
PDF: 11 pages
Proc. SPIE 8430, Optical Micro- and Nanometrology IV, 843009 (9 May 2012); doi: 10.1117/12.922652
Show Author Affiliations
Marc Jobin, HEPIA (Switzerland)
Stéphane Jotterand, HEPIA (Switzerland)
Cédric Pellodi, HEPIA (Switzerland)
Sergio dos Santos, HEPIA (Switzerland)
Cosmin Silviu Sandu, 3D-Oxide (France)
Estelle Wagner, 3D-Oxide (France)
Giacomo Benvenuti, 3D-Oxide (France)


Published in SPIE Proceedings Vol. 8430:
Optical Micro- and Nanometrology IV
Christophe Gorecki; Anand K. Asundi; Wolfgang Osten, Editor(s)

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