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Proceedings Paper

Frequency doubled AlGaInP-VECSEL with high output power at 331 nm and a large wavelength tuning range in the UV
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Paper Abstract

We present a non-resonantly pumped vertical external cavity surface-emitting laser in a compact v-shaped cavity configuration. By using intra-cavity frequency doubling in combination with a birefringent filter, a tunable high power UV laser source with an emission wavelength around 335 nm is realized. The fundamental red laser emission is based on a metal-organic vapor-phase epitaxy grown (GaxIn1-x)0.5P0.5/[(AlxGa1-x)yIn1-y]0.5P0.5 (abbr. GaInP/AlGaInP) multi-quantum-well structure. Five quantum well packages with four compressively strained quantum wells are placed in a separate confinement heterostructure in a resonant periodic gain design in strain-compensating quaternary AlGaInP barriers and cladding layers, respectively. The 3 λ cavity is fabricated on a 55 λ/4 pairs Al0.45Ga0.55As/AlAs distributed Bragg reflector. By using a beta barium borate non-linear crystal for second harmonic generation, output powers up to 150mWat a wavelength of 335 nm could be realized. Tuning of the laser resonance was accomplished with a birefringent filter. A tuning of 9 nm in the UV will be shown.

Paper Details

Date Published: 10 May 2012
PDF: 7 pages
Proc. SPIE 8432, Semiconductor Lasers and Laser Dynamics V, 84320W (10 May 2012); doi: 10.1117/12.922584
Show Author Affiliations
Thomas Schwarzbäck, Univ. of Stuttgart (Germany)
Hermann Kahle, Univ. of Stuttgart (Germany)
Michael Jetter, Univ. of Stuttgart (Germany)
Peter Michler, Univ. of Stuttgart (Germany)


Published in SPIE Proceedings Vol. 8432:
Semiconductor Lasers and Laser Dynamics V
Krassimir Panajotov; Marc Sciamanna; Angel Valle; Rainer Michalzik, Editor(s)

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