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Proceedings Paper

Narrow linewidth 1120 nm GaInAs/GaAs VECSEL for cooling Mg+ ions
Author(s): Sanna Ranta; Tomi Leinonen; Miki Tavast; Ryan Epstein; Mircea Guina
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Paper Abstract

This paper presents the development and narrow-linewidth characteristics of an optically-pumped vertical external-cavity surface-emitting laser emitting light near 1120 nm. The laser development is motivated by the need to achieve narrowlinewidth, frequency-stable laser emission near 280 nm for cooling of Mg+ ions. The laser is capable of emitting ~0.8 W at 1118.542 nm in a less than 300 kHz linewidth.

Paper Details

Date Published: 11 May 2012
PDF: 6 pages
Proc. SPIE 8432, Semiconductor Lasers and Laser Dynamics V, 84320V (11 May 2012); doi: 10.1117/12.922514
Show Author Affiliations
Sanna Ranta, Tampere Univ. of Technology (Finland)
Tomi Leinonen, Tampere Univ. of Technology (Finland)
Miki Tavast, Tampere Univ. of Technology (Finland)
Ryan Epstein, Areté Associates (United States)
Mircea Guina, Tampere Univ. of Technology (Finland)

Published in SPIE Proceedings Vol. 8432:
Semiconductor Lasers and Laser Dynamics V
Krassimir Panajotov; Marc Sciamanna; Angel Valle; Rainer Michalzik, Editor(s)

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