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Proceedings Paper

Near-field characteristics of broad area diode lasers during catastrophic optical damage failure
Author(s): Martin Hempel; Jens W. Tomm; Martina Baeumler; Helmer Konstanzer; Jayanta Mukherjee; Thomas Elsaesser
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Paper Abstract

One of the failure mechanisms preventing diode lasers in reaching ultra high optical output powers is the catastrophic optical damage (COD). It is a sudden degradation mechanism which impairs the device functionality completely. COD is caused by a positive feedback loop of absorbing laser light and increasing temperature at a small portion of the active material, leading to a thermal runaway on a nanosecond timescale. We analyze commercial gain-guided AlGaAs/GaAs quantum well broad area diode lasers in single pulse step tests. The near-field emission on the way to and at the COD is resolved on a picosecond time scale by a streak-camera combined with a microscope. In the final phase of the step tests the COD is occurring at ~50 times threshold current. The growth of the COD defect site is monitored and defect propagation velocities between 30 and 190 μm/μs are determined. The final shape of the damage is verified by opening the device and taking a micro-photoluminescence map of the active layer.

Paper Details

Date Published: 10 May 2012
PDF: 7 pages
Proc. SPIE 8432, Semiconductor Lasers and Laser Dynamics V, 84320O (10 May 2012); doi: 10.1117/12.922395
Show Author Affiliations
Martin Hempel, Max-Born-Institut (Germany)
Jens W. Tomm, Max-Born-Institut (Germany)
Martina Baeumler, Fraunhofer Institut für Angewandte Festkörperphysik (Germany)
Helmer Konstanzer, Fraunhofer Institut für Angewandte Festkörperphysik (Germany)
Jayanta Mukherjee, Univ. of Surrey (United Kingdom)
Thomas Elsaesser, Max-Born-Institut (Germany)


Published in SPIE Proceedings Vol. 8432:
Semiconductor Lasers and Laser Dynamics V
Krassimir Panajotov; Marc Sciamanna; Angel Valle; Rainer Michalzik, Editor(s)

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