Share Email Print
cover

Proceedings Paper

Quantum well intermixing in AlInGaAs QW structures through the interdiffusion of group III atoms
Author(s): Ko-Hsin Lee; Kevin Thomas; Agnieszka Gocalinska; Marina Manganaro; Hua Yang; Emanuele Pelucchi; Frank H. Peters; Brian Corbett
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

In this paper, the composition profiles within intermixed AlInGaAs-based multiple quantum wells structure are analyzed by secondary ion mass spectrometry and the bandgap blue shift is found to be mainly attributed to the interdiffusion of In and Ga between the quantum wells and barriers. Based on these results, AlInGaAs-based single quantum well structures with various compressive strain (CS) levels are then investigated and we report an enhancement of the bandgap shift by increasing the compressive strain level in the SQW. For instance, at an annealing temperature of 850°C, the photoluminescence blue shift can reach more than 110 nm for the sample with 1.2%-CS SQW, but only 35 nm with 0.4%-CS SQW. The indium composition ratios are designed to be 0.59 and 0.71 for the 0.4% and 1.2%-CS quantum wells, respectively, as opposed to 0.53 for the lattice-matched barrier. This relatively larger atomic compositional gradient between the CS quantum well and barrier is expected to facilitate the atomic interdiffusion and lead to the more pronounced bandgap shift.

Paper Details

Date Published: 10 May 2012
PDF: 6 pages
Proc. SPIE 8431, Silicon Photonics and Photonic Integrated Circuits III, 84311Z (10 May 2012); doi: 10.1117/12.922325
Show Author Affiliations
Ko-Hsin Lee, Tyndall National Institute (Ireland)
Kevin Thomas, Tyndall National Institute (Ireland)
Agnieszka Gocalinska, Tyndall National Institute (Ireland)
Marina Manganaro, Tyndall National Institute (Ireland)
Hua Yang, Tyndall National Institute (Ireland)
Emanuele Pelucchi, Tyndall National Institute (Ireland)
Frank H. Peters, Tyndall National Institute (Ireland)
Univ. College Cork (Ireland)
Brian Corbett, Tyndall National Institute (Ireland)


Published in SPIE Proceedings Vol. 8431:
Silicon Photonics and Photonic Integrated Circuits III
Laurent Vivien; Seppo K. Honkanen; Lorenzo Pavesi; Stefano Pelli, Editor(s)

© SPIE. Terms of Use
Back to Top