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Proceedings Paper

Characterization of microcrystalline I-layer for solar cells prepared in low temperature - plastic compatible process
Author(s): Rafal Sliz; Arman Ahnood; Arokia Nathan; Risto Myllyla; Ghassan Jabbour
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Paper Abstract

Microcrystalline silicon (mc-Si) lms deposited using a Plasma Enhanced Chemical Vapour Deposition (PECVD) process constitute an important material for manufacturing low-cost, large-area thin-lm devices, such as solar cells or thin-lm transistors. Although the deposition of electronic-grade mc-Si using the PECVD process is now well established, the high substrate temperature required (~400°C) does not lend itself to electronic devices with exible form factors fabricated on low-cost plastic substrates. In this study, we rst investigated an intrinsic mc-Si layer deposited at plastic-compatible substrate temperatures (~150°C) by characterising the properties of the lm and then evaluated its applicability to p-i-n solar cells though device characterisation. When the performance of the solar cell was correlated with lm properties, it was found that, although it compared unfavourably with mc-Si deposited at higher temperatures, it remained a very promising option. Nonetheless, further development is required to increase the overall eciency of mc-Si exible solar cells.

Paper Details

Date Published: 2 May 2012
PDF: 6 pages
Proc. SPIE 8438, Photonics for Solar Energy Systems IV, 84381E (2 May 2012); doi: 10.1117/12.922302
Show Author Affiliations
Rafal Sliz, Univ. of Oulu (Finland)
Arman Ahnood, Cambridge Univ. (United Kingdom)
Arokia Nathan, Cambridge Univ. (United Kingdom)
Risto Myllyla, Univ. of Oulu (Finland)
Ghassan Jabbour, Univ. of Oulu (Finland)
KAUST (Saudi Arabia)


Published in SPIE Proceedings Vol. 8438:
Photonics for Solar Energy Systems IV
Ralf Wehrspohn; Andreas Gombert, Editor(s)

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