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Proceedings Paper

Transverse mode and polarization characteristics of AlGaInP-based VCSELs with integrated multiple oxide apertures
Author(s): Susanne Weidenfeld; Hendrik Niederbracht; Marcus Eichfelder; Michael Jetter; Peter Michler
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Paper Abstract

In the current work, we show a detailed analysis of the transverse beam profile and polarization characteristics of devices with one and three oxide apertures. A Gaussian transverse beam profile is achieved with an oxide aperture diameter of less than 6 μm. The laser light is linearly polarized with a high degree of polarization (> 97 %) in the complete current range. The stable polarization direction can be attributed to ordering effects ocurring during epitaxial growth of the GaInP material system and a reduction in crystal symmetry. Different oxide aperture diameters can be implemented in one device due to high oxidation selectivity of the AlxGa1-xAs layer depending on aluminum content. These deep oxidation layers lead to a reduction of the parasitic capacitance, while beam profile and polarization characteristics are not affected.

Paper Details

Date Published: 10 May 2012
PDF: 8 pages
Proc. SPIE 8432, Semiconductor Lasers and Laser Dynamics V, 843205 (10 May 2012); doi: 10.1117/12.922278
Show Author Affiliations
Susanne Weidenfeld, Univ. of Stuttgart (Germany)
Hendrik Niederbracht, Univ. of Stuttgart (Germany)
Marcus Eichfelder, Univ. of Stuttgart (Germany)
Michael Jetter, Univ. of Stuttgart (Germany)
Peter Michler, Univ. of Stuttgart (Germany)


Published in SPIE Proceedings Vol. 8432:
Semiconductor Lasers and Laser Dynamics V
Krassimir Panajotov; Marc Sciamanna; Angel Valle; Rainer Michalzik, Editor(s)

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