Share Email Print
cover

Proceedings Paper

A 64 single photon avalanche diode array in 0.18 µm CMOS standard technology with versatile quenching circuit for quick prototyping
Author(s): Wilfried Uhring; Jean-Pierre Le Normand; Virginie Zint; Norbert Dumas; Foudil Dadouche; Imane Malasse; Jeremy Scholz
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Several works have demonstrated the successfully integration of Single-photon avalanche photodiodes (SPADs) operating in Geiger mode in a standard CMOS circuit for the last 10 years. These devices offer an exceptional temporal resolution as well as a very good optical sensitivity. Nevertheless, it is difficult to predict the expected performances of such a device. Indeed, for a similar structure of SPAD, some parameter values can differ by two orders of magnitude from a technology to another. We proposed here a procedure to identify in just one or two runs the optimal structure of SPAD available for a given technology. A circuit with an array of 64 SPAD has been realized in the Tower-Jazz 0.18 μm CMOS image sensor process. It encompasses an array of 8 different structures of SPAD reproduced in 8 diameters in the range from 5 μm up to 40 μm. According to the SPAD structures, efficient shallow trench insulator and/or P-Well guard ring are used for preventing edge breakdown. Low dark count rate of about 100 Hz are expected thanks to the use of buried n-well layer and a high resistivity substrate. Each photodiode is embedded in a pixel which includes a versatile quenching circuitry and an analog output of its cathode voltage. The quenching system is configurable in four operation modes; the SPAD is disabled, the quenching is completely passive, the reset of the photodiode is active and the quenching is fully active. The architecture of the array makes possible the characterization of every single photodiode individually. The parameters to be measured for a SPAD are the breakdown avalanche voltage, the dark count rate, the dead time, the timing jitter, the photon detection probability and the after-pulsing rate.

Paper Details

Date Published: 9 May 2012
PDF: 8 pages
Proc. SPIE 8439, Optical Sensing and Detection II, 84391E (9 May 2012); doi: 10.1117/12.922130
Show Author Affiliations
Wilfried Uhring, CNRS, InESS, Univ. of Strasbourg (France)
Jean-Pierre Le Normand, CNRS, InESS, Univ. of Strasbourg (France)
Virginie Zint, CNRS, InESS, Univ. of Strasbourg (France)
Norbert Dumas, CNRS, InESS, Univ. of Strasbourg (France)
Foudil Dadouche, CNRS, InESS, Univ. of Strasbourg (France)
Imane Malasse, CNRS, InESS, Univ. of Strasbourg (France)
Jeremy Scholz, CNRS, InESS, Univ. of Strasbourg (France)


Published in SPIE Proceedings Vol. 8439:
Optical Sensing and Detection II
Francis Berghmans; Anna Grazia Mignani; Piet De Moor, Editor(s)

© SPIE. Terms of Use
Back to Top