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Proceedings Paper

High quality factor dielectric multilayer structures fabricated by rf-sputtering
Author(s): Alessandro Chiasera; Sreeramulu Valligatla; Stefano Varas; Nicola Bazzanella; D. Narayana Rao; Giancarlo C. Righini; Maurizio Ferrari
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Paper Abstract

Rare earth activated 1-D photonic crystals were fabricated by rf-sputtering technique. The cavity is constituted by an Er3+-doped SiO2 active layer inserted between two Bragg reflectors consisting of ten pairs of SiO2/TiO2 layers. SEM microscopy is employed to put in evidence the quality of the sample, the homogeneities of the layers thicknes and the good adhesion. NIR transmittance and variable angle reflectance spectra confirm that the presence of a stop-band from 1500 nm to 2000 nm with a cavity resonance centered at 1749 nm at 0° with a quality factor Q is about 890. The influence of the cavity on the 4I13/24I15/2 emission band of Er3+ ion is also demonstrated.

Paper Details

Date Published: 10 May 2012
PDF: 7 pages
Proc. SPIE 8431, Silicon Photonics and Photonic Integrated Circuits III, 843127 (10 May 2012); doi: 10.1117/12.921695
Show Author Affiliations
Alessandro Chiasera, IFN-CNR, CSMFO Lab. (Italy)
Sreeramulu Valligatla, IFN-CNR, CSMFO Lab. (Italy)
Univ. di Trento (Italy)
Univ. of Hyderabad (India)
Stefano Varas, IFN-CNR, CSMFO Lab. (Italy)
Nicola Bazzanella, Univ. di Trento (Italy)
D. Narayana Rao, Univ. of Hyderabad (India)
Giancarlo C. Righini, Ctr. Fermi (Italy)
IFAC-CNR (Italy)
Maurizio Ferrari, IFN-CNR, CSMFO Lab. (Italy)


Published in SPIE Proceedings Vol. 8431:
Silicon Photonics and Photonic Integrated Circuits III
Laurent Vivien; Seppo K. Honkanen; Lorenzo Pavesi; Stefano Pelli, Editor(s)

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