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Proceedings Paper

A photo-sensor on thin polysilicon membrane embedded in wafer level package LED
Author(s): Jin Kwan Kim; Hee Chul Lee
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Paper Abstract

A wafer level packaging LED with photo-sensor which is fabricated on thin poly-silicon membrane located on the corner of silicon cavity is presented in this paper. The wafer substrate was fabricated with (100) orientation silicon wafer and a cavity was etched on the top of the wafer with wet chemical anisotropic etching process for mounting a LED chip. A thin polysilicon membrane was fabricated on the corner of the cavity and a MSM (Metal Semiconductor Metal) type photo-sensor was fabricated on the thin polysilicon membrane. The photo-sensor fabrication and LED packaging were completed on wafer level. The embedded photo-sensor in a wafer level packaging LED is designed to measure light intensity of a LED. The membrane structure photo-sensor can sense the light of the mounted LED directly, so it can measure accurate light intensity of the wafer level packing LED.

Paper Details

Date Published: 11 May 2012
PDF: 7 pages
Proc. SPIE 8431, Silicon Photonics and Photonic Integrated Circuits III, 843121 (11 May 2012); doi: 10.1117/12.921623
Show Author Affiliations
Jin Kwan Kim, KAIST (Korea, Republic of)
Hee Chul Lee, KAIST (Korea, Republic of)


Published in SPIE Proceedings Vol. 8431:
Silicon Photonics and Photonic Integrated Circuits III
Laurent Vivien; Seppo K. Honkanen; Lorenzo Pavesi; Stefano Pelli, Editor(s)

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