Share Email Print
cover

Proceedings Paper

A fast approach to model EUV mask 3D and shadowing effects
Author(s): Ying Li; Danping Peng; Masaki Satake; Peter Hu
Format Member Price Non-Member Price
PDF $17.00 $21.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

EUV lithography is one of the leading candidates to replace traditional DUV for semiconductor patterning. Different from DUV mask, EUV masks consists of an absorber pattern layer and 40 layers of alternating molybdenum and silicon to generate reflective mask near field. Due to the complexity of the EUV mask structure, the high profile of the absorber layer relative to wavelength, and the non-telecentric nature of EUV optics, mask 3D- and shadowing effects are important and must be taken into consideration. The goal of our simulator is to build an empirical model specially tailored to capture such effects by reconstructing thin mask spectrum to match with rigorous simulation within the pupil of interests. In this study, we will present the mechanisms and accuracy results of our absorber model.

Paper Details

Date Published: 16 April 2012
PDF: 8 pages
Proc. SPIE 8352, 28th European Mask and Lithography Conference, 835207 (16 April 2012); doi: 10.1117/12.921442
Show Author Affiliations
Ying Li, Luminescent Technologies, Inc. (United States)
Danping Peng, Luminescent Technologies, Inc. (United States)
Masaki Satake, Luminescent Technologies, Inc. (United States)
Peter Hu, Luminescent Technologies, Inc. (United States)


Published in SPIE Proceedings Vol. 8352:
28th European Mask and Lithography Conference
Uwe F.W. Behringer; Wilhelm Maurer, Editor(s)

© SPIE. Terms of Use
Back to Top